| PART |
Description |
Maker |
| LH532100B LH532100BD LH532100BN LH532100BS LH53210 |
CMOS 2M(256K x 8) Mask-Programmable ROM
CMOS 2M (256K x 8) MROM
CONN SCSI .085 MALE RA 14POS
|
Sharp Electrionic Components
Sharp Corporation
|
| MB81V4265-70 |
CMOS 256K ×16BIT
Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超级页面存取模式动态RAM)
|
Fujitsu Limited
|
| IDT71V416S10PHG IDT71V416S10PHGI IDT71V416S12PHG I |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PBGA48
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 10 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| MX26C2000BQI-15 MX26C2000BTC-10 MX26C2000BTI-10 MX |
DIODE SCHOTTKY 15V 2X35A TO247AD
SWITCH PB SPST-NO .4VA SOLDERLUG
CONNECTOR ACCESSORY
2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
IC HALF BRIDGE DRVR HS 2A 16-DIP 256K X 8 FLASH 12V PROM, 90 ns, PQCC32
2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| W29C020T-90 W29C020T-12 W29C020T-90A W29C020T-70B |
256K X 8 CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 90 ns, PDSO32
256K X 8 CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 90 ns, PDIP32
256K X 8 CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 70 ns, PQCC32
256K X 8 CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDSO32
BOX 3.4X2.56X1.02 W/6 BTNS ALMOND 256K X 8 FLASH 5V PROM, 70 ns, PDSO32
BOX 3.4X2.56X1.02 W/6 BTNS BLK 256K X 8 FLASH 5V PROM, 70 ns, PDSO32
BOX 3.4X2.56X1.02 W/3 BTNS ALMOND
BOX 2.53X1.73X.65 W/2 BTNS BLK
256K X 8 CMOS FLASH MEMORY
|
Winbond Electronics, Corp.
Winbond Electronics Corp
|
| NM27C240 NM27C240QE120 |
4 Meg (256K x 16) High Performance CMOS EPROM [Life-time buy]
4,194,304-Bit (256k x 16) High Performance CMOS EPROM
4 /194 /304-Bit (256k x 16) High Performance CMOS EPROM
4,194,304位（256k × 16）高性能的CMOS存储
|
FAIRCHILD[Fairchild Semiconductor]
|
| MX29F022NBPC-55 MX29F022NTPC-55 MX29F022BPC-55 MX2 |
2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDIP32
2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 90 ns, PDSO32
2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDIP32
2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 90 ns, PDIP32
2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 70 ns, PQCC32
2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDSO32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| MX23C4096 23C4096 MX23C4096QC-20 MX23C4096PC-10 MX |
4M-BIT [256K x 16] CMOS MASK ROM 4分位[256K × 16]的CMOS掩膜ROM
From old datasheet system
|
Electronic Theatre Controls, Inc.
http://
List of Unclassifed Manufacturers
Macronix 旺宏
ETC[ETC]
Macronix International
|
| KM641001A |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| LH52256C-10LL LH525CL9 |
256K SRAM
CMOS 256K (32K x8) Static RAM(CMOS 256K (32K x8) 静态RAM) 的CMOS 256K2K的8）静态RAM（的CMOS 256K2K的8）静态的RAM
|
Sharp Electrionic Compo...
Sharp Electrionic Components
Sharp, Corp.
|
| IDT71V416VL IDT71V416VS15YGI IDT71V416VL10BEG IDT7 |
From old datasheet system
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PDSO44
Transformers Only Module 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| HY53C256 HY53C256LS HY53C256S |
256K x 1-Bit CMOS DRAM 256K × 1位CMOS内存
|
Hynix Semiconductor, Inc.
|
